Power Supply: 1.35V (typ.), VDD, VDDQ = 1.283V to 1.45V
Backward compatible to VDD, VDDQ=1.5V ± 0.075 V
Double Data Rate architecture: two data transfers per clock cycle
Eight internal banks for concurrent operation
8 bit prefetch architechure
CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14
Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable On-The-Fly (OTF)
Programmable read burst ordering: interleaved or nibble sequential
Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received with data
Edge-aligned with read data and center-aligned with write data
DLL aligns DQ and DQS transitions with clock
Differential clock inputs (CK and CK#)
Commands entered on each positive CK edge, data and data mask are referenced to both edges of a differential data strobe pair (double data rate)
Posted CAS with programmable additive latency (AL = 0, CL -1 and CL -2) for improved command, address and data bus efficiency
Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)
Auto-precharge operation for read and write bursts
Refresh, Self-Refresh, Auto Seif- refresh (ASR) and Partial array self refresh (PASR)
Precharged Power Down ans Active Power Down
Data masks (DM) for write data
Programmable CAS Write Latency (CWL) per operating frequency
Write Latency WL = AL + CWL
Multi purpose register (MPR) for readout a predefined system timing calibration bit sequence
System level timing calibration support via write leveling and MPR read pattem
ZQ Calibration for output driver and ODT using extermal reference resistor to ground
Asynchronous RESET# pin for Power-up initialization sequence reset function
Programmable on-die termination (ODT) for data, data mask and differential strobe pairs
Dynamic ODT mode for improved signal integrity and preselectable termination impedances during writes
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